Barrier engineering in quantum dots in a well detector

Sanjay Krishna

doi:10.1117/12.909924

20 January 2012 Barrier engineering in quantum dots in a well detector

Sanjay Krishna

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82680W (2012) https://doi.org/10.1117/12.909924
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Quantum dot infrared photodetectors have generated a lot of interest in the recent past due to their potential for low dark current and high operating temperature. We demonstrate the use of thin AlGaAs barrier layers in the quantum dots in a well (DWELL) heterostructure to enhance the quantum confinement of carriers in the excited energy level. By controlling the excited state energy of the DWELL structure between the confinement enhancing (CE) barriers and near the continuum level of the barrier between the stacks, high quantum confinement as well as high escape probability for the photoexcited carriers has been obtained. High responsivity and detectivity of 6.5x10¹⁰ cm.Hz^1/2W^-1 (77K, 0.6V, 7.5mm, f/2), a factor of 10 improvement over a control sample without the CE barriers has been measured. The effect of changing the quantum well thickness and quantum dot size is also reported.

Citation Download Citation

Sanjay Krishna "Barrier engineering in quantum dots in a well detector", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680W (20 January 2012); https://doi.org/10.1117/12.909924

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