Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

TaeWan Kim; Toby J. Garrod; Kangho Kim; Jaejin Lee; Luke J. Mawst; T. F. Kuech; S. D. LaLumondiere; Y. Sin; W. T. Lotshaw; S. C. Moss

doi:10.1117/12.906961

22 February 2012 Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

TaeWan Kim, Toby J. Garrod, Kangho Kim, Jaejin Lee, Luke J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

Author Affiliations +

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 82561D (2012) https://doi.org/10.1117/12.906961
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Bulk, lattice-matched InGaAsSbN material has been grown by metal organic vapor phase epitaxy (MOVPE) for applications in concentrated multi-junction solar cells. By optimizing the growth conditions for high Sb and As partial pressures, we achieved background hole concentrations as low as 2 x 10¹⁸ cm^-3. After thermal annealing, the background hole concentration increased from 2x10¹⁸ to 2 x 1019 cm^-3, although PL intensity increased by a factor of 7. We recently grew single junction (1eV) solar cells incorporating dilute-nitride materials and devices were fabricated and characterized for solar cell application. Performance characteristics of these cells without anti-reflection coating included the efficiency of 4.25% under the AM1.5 (air mass) direct illumination, V_oc of 0.7 V, and a spectral response extended to longer wavelength compared with GaAs cells.

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TaeWan Kim, Toby J. Garrod, Kangho Kim, Jaejin Lee, Luke J. Mawst, T. F. Kuech, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, and S. C. Moss "Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 82561D (22 February 2012); https://doi.org/10.1117/12.906961

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