Scanning photocurrent microscopy in single nanowire devices

Rion Graham; Chris Miller; Mark Triplett; Dong Yu

doi:10.1117/12.899410

16 September 2011 Scanning photocurrent microscopy in single nanowire devices

Rion Graham, Chris Miller, Mark Triplett, Dong Yu

Proceedings Volume 8106, Nanoepitaxy: Materials and Devices III; 81060K (2011) https://doi.org/10.1117/12.899410
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States

Abstract

Scanning photocurrent microscopy (SPCM) is a powerful technique for investigating local electronic structures and charge transport in semiconductor nanowires. Here we apply this technique to explore colloidal PbSe nanowires and VO₂ nanobeams. Field effect transistors incorporating single colloidal PbSe nanowires were fabricated. A fast, sensitive polarization-dependent photoresponse was observed. SPCM of as-grown PbSe nanowires showed a downward band bending towards the metal electrodes, consistent with their p-type nature. At 54 °C, SPCM of VO₂ nanobeams revealed band bending at the metallic/insulating domain boundaries. At room temperature, we observed photocurrent spots in the middle of the VO₂ nanobeams, indicating local electric fields likely caused by defects.

Citation Download Citation

Rion Graham, Chris Miller, Mark Triplett, and Dong Yu "Scanning photocurrent microscopy in single nanowire devices", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060K (16 September 2011); https://doi.org/10.1117/12.899410

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