Barrier engineering in superlattices and quantum dots for higher operating temperature

Sanjay Krishna

doi:10.1117/12.862072

27 August 2010 Barrier engineering in superlattices and quantum dots for higher operating temperature

Sanjay Krishna

Proceedings Volume 7808, Infrared Remote Sensing and Instrumentation XVIII; 780804 (2010) https://doi.org/10.1117/12.862072
Event: SPIE Optical Engineering + Applications, 2010, San Diego, California, United States

Abstract

The third generation of infrared detectors has seen a lot of emphasis been placed on Higher Operating Temperature (HOT) devices. In our research group, we are investigating barrier engineering in two promising material systems namely the type II strained layer superlattices and quantum dots in a well (DWELL) heterostructure. In this paper, we will outline some of our recent approaches to use barrier engineering to obtain a lower dark current and higher operating temperature in these devices.

Citation Download Citation

Sanjay Krishna "Barrier engineering in superlattices and quantum dots for higher operating temperature", Proc. SPIE 7808, Infrared Remote Sensing and Instrumentation XVIII, 780804 (27 August 2010); https://doi.org/10.1117/12.862072

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