Paper
17 March 2010 Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films
Simi A. George, Patrick P. Naulleau, Ahila Krishnamoorthy, Zeyu Wu, Edward W. Rutter Jr., Joseph T. Kennedy, Song Yuan Xie, Kyle Y. Flanigan, Thomas I. Wallow
Author Affiliations +
Abstract
Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall roughness to be highly anisotropic and the roughness to be propagating from the resistsubstrate interface up the resist pattern sidewall. In ultrathin resist films, (film thickness ca. 100 nm and below) roughness is found to be fully correlated from the resist-substrate interface to the resist-air interface. This behavior is seen regardless of the resist platforms being used. Underlayer stack roughness contributions to the pattern sidewall roughness leading to resist LER were examined and no correlations between the two were found. At the same time, the chemical properties of the underlayer stacks are shown to have strong influences on the resist roughness and process performance. Exact mechanisms behind this are not clearly understood at present.
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Simi A. George, Patrick P. Naulleau, Ahila Krishnamoorthy, Zeyu Wu, Edward W. Rutter Jr., Joseph T. Kennedy, Song Yuan Xie, Kyle Y. Flanigan, and Thomas I. Wallow "Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763605 (17 March 2010); https://doi.org/10.1117/12.848405
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Cited by 14 scholarly publications.
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KEYWORDS
Line edge roughness

Interfaces

Thin films

Photoresist materials

Extreme ultraviolet lithography

3D image processing

Extreme ultraviolet

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