InSb nanowire based field effect transistor

X. Jing; M. Penchev; J. Zhong; R. Paul; M. Ozkan; C. Ozkan

doi:10.1117/12.826805

20 August 2009 InSb nanowire based field effect transistor

X. Jing, M. Penchev, J. Zhong, R. Paul, M. Ozkan, C. Ozkan

Proceedings Volume 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI; 74020I (2009) https://doi.org/10.1117/12.826805
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

InSb nanowire field effect transistors (NWFET) were fabricated using electrochemically synthesized nanowires. To accurately extract transistor parameters, we introduced a model which takes into account the often ignored ungated nanowire segments. A significant improvement in extracted device parameters was observed which demonstrated that conventional models tend to underestimate the gate effect and therefore lead to lower carrier mobilities. Based on the model, we obtained a NWFET ON current of 11.8uA, an I_ON/I_OFF ratio of 63.5 and hole mobility of 292.84 cm²V^-1s^-1.

Citation Download Citation

X. Jing, M. Penchev, J. Zhong, R. Paul, M. Ozkan, and C. Ozkan "InSb nanowire based field effect transistor", Proc. SPIE 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI, 74020I (20 August 2009); https://doi.org/10.1117/12.826805

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