Paper
20 August 2009 Gating of single layer graphene using DNA
Jian Lin, Desalegne Teweldebrhan, Khalid Ashraf, Guanxiong Liu, Xiaoye Jing, Zhong Yan, Rong Li, Roger K. Lake, Mihri Ozkan, Alexander A. Balandin, Cengiz S. Ozkan
Author Affiliations +
Abstract
Single strand DNA (ss-DNA) fragments act as negative potential gating agents that increase the hole density in graphene. Patterning of biomolecules on graphene could provide new avenues to modulate the electrical properties. Current-voltage characterization of this hybrid ss-DNA / graphene system indicates a shift of the Dirac point and "intrinsic" conductance after ss-DNA is deposited. The effect of the ss-DNA is to increase the hole density in the graphene. The increased hole density is calculated to be 2 × 1012 cm-2. This increase is consistent with the Raman frequency shifts in the G peak and 2D band positions and the corresponding changes in the G-peak full-width half maximum. Ab initio calculations using density functional theory rule out significant charge transfer or modification of the graphene bandstructure in the presence of the ss-DNA fragments.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian Lin, Desalegne Teweldebrhan, Khalid Ashraf, Guanxiong Liu, Xiaoye Jing, Zhong Yan, Rong Li, Roger K. Lake, Mihri Ozkan, Alexander A. Balandin, and Cengiz S. Ozkan "Gating of single layer graphene using DNA", Proc. SPIE 7403, Nanobiosystems: Processing, Characterization, and Applications II, 74030C (20 August 2009); https://doi.org/10.1117/12.826801
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Cited by 1 scholarly publication.
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KEYWORDS
Graphene

Raman spectroscopy

Modulation

Coating

Doping

Microchannel plates

Optical lithography

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