THz emission from coherent plasmons in InAs nanowires

D. V. Seletskiy; M. P. Hasselbeck; M. Sheik-Bahae; J. G. Cederberg; A. A. Talin

doi:10.1117/12.810875

6 February 2009 THz emission from coherent plasmons in InAs nanowires

D. V. Seletskiy, M. P. Hasselbeck, M. Sheik-Bahae, J. G. Cederberg, A. A. Talin

Proceedings Volume 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII; 72140Y (2009) https://doi.org/10.1117/12.810875
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We report the first observation of coherent plasmon emission of THz radiation from arrays of semiconductor nanowires. The THz signal strength from InAs nanowires is comparable to a planar substrate, indicating the nanowires are highly efficient emitters. This is explained by the preferential orientation of plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. Using a bulk Drude model, we identify the average donor density and mobility in the nanowires in a non-contact manner. Contact IV transconductance measurements provide order of magnitude agreement with values obtained from the THz spectra.

Citation Download Citation

D. V. Seletskiy, M. P. Hasselbeck, M. Sheik-Bahae, J. G. Cederberg, and A. A. Talin "THz emission from coherent plasmons in InAs nanowires", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140Y (6 February 2009); https://doi.org/10.1117/12.810875

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