InAs quantum-dot intersubband optical amplifier

Xuejun Lu

doi:10.1117/12.796706

3 September 2008 InAs quantum-dot intersubband optical amplifier

Xuejun Lu

Proceedings Volume 7055, Infrared Systems and Photoelectronic Technology III; 705503 (2008) https://doi.org/10.1117/12.796706
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

A coupled quantum dot intersubband optical amplifier structure is reported. InGaAsP/GaAs supperlattice is used to effectively generate population inversion between the excited states and the ground state of the QD. Due to the three-dimensional quantum confinement, normal incidence optical amplification with low threshold current density can be expected. Such an intersubband optical amplifier is promising for highly-sensitive middle infrared (MWIR) and longwave infrared sensing and imaging.

Citation Download Citation

Xuejun Lu "InAs quantum-dot intersubband optical amplifier", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 705503 (3 September 2008); https://doi.org/10.1117/12.796706

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