Paper
5 February 2008 Single-photon avalanche photodiode with improved structure using an innovative current bias scheme
Yonglin Gu, Fow-Sen Choa, Yan Feng, Xiucheng Wu, Stewart Wu, Bing Guan, Peter Su, Michael A. Krainak
Author Affiliations +
Abstract
Single-photon avalanche photodiodes (SPADs) based on an improved structure were fabricated. Measurement results show that SPADs with a sharp rising I-V and gain curves were obtained by controlling SPAD's multiplication region thickness. The tunneling leakage current was reduced. Device's dark count rates (DCR) and single photon detection efficiency (SPDE) were measured using our innovative gated current bias scheme under different operating conditions to obtain a maximum SPDE. The experimental data demonstrated that SPADs' performance can be improved by decreasing the difference between the breakdown voltage and the punch through voltage.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yonglin Gu, Fow-Sen Choa, Yan Feng, Xiucheng Wu, Stewart Wu, Bing Guan, Peter Su, and Michael A. Krainak "Single-photon avalanche photodiode with improved structure using an innovative current bias scheme", Proc. SPIE 6890, Optical Components and Materials V, 68900N (5 February 2008); https://doi.org/10.1117/12.764540
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Cited by 3 scholarly publications.
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KEYWORDS
Avalanche photodetectors

Doping

Single photon

Indium gallium arsenide

Photon counting

Avalanche photodiodes

Absorption

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