Tip-enhanced near-field Raman spectroscopy using a scanning tunneling microscope with side illumination optics

K. J. Yi; X. N. He; Y. F. Lu

doi:10.1117/12.762183

23 February 2008 Tip-enhanced near-field Raman spectroscopy using a scanning tunneling microscope with side illumination optics

K. J. Yi, X. N. He, Y. F. Lu

Author Affiliations +

Proceedings Volume 6880, Laser-based Micro- and Nanopackaging and Assembly II; 688006 (2008) https://doi.org/10.1117/12.762183
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

Raman spectroscopy (RS) is a key tool to characterize residual stress in silicon devices because the vibrational frequencies of a silicon substrate change with its stress. However, due to the intrinsic optical diffraction limit, conventional micro-Raman spectroscopy can only have a probe resolution of around 1 μm², which is not sufficient for nanotechnology-oriented electronic industry. Low sensitivity is another problem to be solved to maximize the potential of this technique. In this study, a novel Raman spectrometer, which can overcome the optical diffraction limit, was built with the attempt to improve the resolution as well as the detection sensitivity. This approach instrument, which is based upon tip-enhanced near-field effects, has a nanoscale resolution by deploying a silver-coated tungsten tip mounted on a scanning tunneling microscope (STM) with side illumination optics. It features fast and reliable optical alignment, versatile sample adaptability and effective far-field signal suppression. The performance was evaluated by observing the enhancement effects on silicon substrates and single-walled carbon nanotubes (SWCNTs). It was found that apparent enhancement as high as 120% on silicon substrates could be achieved using the depolarization technique. It is believed that this technique is promising for future diagnosis of semiconductor materials and devices at nanoscales, especially for stress mapping of semiconductor devices.

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K. J. Yi, X. N. He, and Y. F. Lu "Tip-enhanced near-field Raman spectroscopy using a scanning tunneling microscope with side illumination optics", Proc. SPIE 6880, Laser-based Micro- and Nanopackaging and Assembly II, 688006 (23 February 2008); https://doi.org/10.1117/12.762183

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KEYWORDS

Raman spectroscopy

Silicon

Scanning tunneling microscopy

Remote sensing

Near field optics

Optical alignment

Tungsten

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