Paper
20 June 2006 Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept
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Abstract
We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Seshadri, D. M. Cole, B. Hancock, P. Ringold, C. Peay, C. Wrigley, M. Bonati, M. G. Brown, M. Schubnell, G. Rahmer, D. Guzman, D. Figer, G. Tarle, R. M. Smith, and C. Bebek "Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept", Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 62760S (20 June 2006); https://doi.org/10.1117/12.673252
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Indium gallium arsenide

Mercury cadmium telluride

Multiplexers

Quantum efficiency

Imaging systems

Data conversion

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