High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates

Joan Marie Redwing; Sarah M. Dilts; Kok-Keong Lew; Alexana Cranmer; Suzanne E. Mohney

doi:10.1117/12.632745

12 November 2005 High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates

Joan Marie Redwing, Sarah M. Dilts, Kok-Keong Lew, Alexana Cranmer, Suzanne E. Mohney

Proceedings Volume 6003, Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems; 60030S (2005) https://doi.org/10.1117/12.632745
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

The fabrication of high density arrays of semiconductor nanowires is of interest for nanoscale electronics, chemical and biological sensing and energy conversion applications. We have investigated the synthesis, intentional doping and electrical characterization of Si and Ge nanowires grown by the vapor-liquid-solid (VLS) method in nanoporous alumina membranes. Nanoporous membranes provide a convenient platform for nanowire growth and processing, enabling control of wire diameter via pore size and the integration of contact metals for electrical testing. For VLS growth in nanoporous materials, reduced pressures and temperatures are required in order to promote the diffusion of reactants into the pore without premature decomposition on the membrane surface or pore walls. The effect of growth conditions on the growth rate of Si and Ge nanowires from SiH₄ and GeH₄ sources, respectively, was investigated and compared. In both cases, the measured activation energies for nanowire growth were substantially lower than activation energies typically reported for Si and Ge thin film deposition under similar growth conditions, suggesting that gold plays a catalytic role in the VLS growth process. Intentionally doped SiNW arrays were also prepared using trimethylboron (TMB) and phosphine (PH₃) as p-type and n-type dopant sources, respectively. Nanowire resistivities were calculated from plots of the array resistance as a function of nanowire length. A decrease in resistivity was observed for both n-type and p-type doped SiNW arrays compared to those grown without the addition of a dopant source.

Citation Download Citation

Joan Marie Redwing, Sarah M. Dilts, Kok-Keong Lew, Alexana Cranmer, and Suzanne E. Mohney "High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates", Proc. SPIE 6003, Nanostructure Integration Techniques for Manufacturable Devices, Circuits, and Systems: Interfaces, Interconnects, and Nanosystems, 60030S (12 November 2005); https://doi.org/10.1117/12.632745

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