Paper
30 August 2005 Thin-film fullerenes for organic field-effect transistors and complementary digital logic circuits
Joshua Haddock, Benoit Domercq, Bernard Kippelen
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Abstract
Significant progress has been made in the area of p-type organic field-effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C60 and C70. Here, we report mobilities for C60 ranging from 0.02 cm2/Vs up to 0.65 cm2/Vs (depending on channel length), and mobilities from 0.003 cm2/Vs up to 0.066 cm2/Vs for C70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.
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Joshua Haddock, Benoit Domercq, and Bernard Kippelen "Thin-film fullerenes for organic field-effect transistors and complementary digital logic circuits", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594015 (30 August 2005); https://doi.org/10.1117/12.615266
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KEYWORDS
Field effect transistors

Transistors

Thin films

Fullerenes

Electrodes

Digital electronics

Organic semiconductors

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