Paper
7 July 2005 High-power continuous-wave mid-infrared quantum cascade lasers based on strain-balanced heterostructures (Invited Paper)
M. Razeghi, A. Evans, S. Slivken, J. S. Yu, J. G. Zheng, V. P. Dravid
Author Affiliations +
Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.607576
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
Limiting factors for short-wavelength QCL designs are discussed, and a model is described to predict the short-wavelength limit for strain-balanced QCL structures. High performance is predicted at wavelengths as short as 3.0mm based on a conduction band offset of 0.9 eV in the GaInAs/AlInAs materials. Recent work is presented on the growth of strained materials using gas-source molecular beam epitaxy to investigate the model predictions. Advanced material characterization, including HR-STEM, high-resolution x-ray diffraction, photoluminescence, atomic force microscopy, and wafer-scale uniformity and repeatability are demonstrated for strain-balanced QCL structures. Laser testing results are presented for QCLs operating at ~4.8mm, and lastly, predictions for further performance improvement at short wavelengths are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Razeghi, A. Evans, S. Slivken, J. S. Yu, J. G. Zheng, and V. P. Dravid "High-power continuous-wave mid-infrared quantum cascade lasers based on strain-balanced heterostructures (Invited Paper)", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.607576
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Cited by 9 scholarly publications.
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KEYWORDS
Quantum cascade lasers

Continuous wave operation

Semiconducting wafers

Mid-IR

Heterojunctions

Temperature metrology

Gallium

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