Paper
6 May 2005 High-resolution residual layer thickness metrology using x-ray reflectivity
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Abstract
Controlling the thickness and uniformity of the unpatterned, residual layer is a critical challenge to sub-50 nm patterning with nanoimprint lithography (NIL). While nanometer level uniformity is essential, there is currently a lack of metrological capability for residual layer characterization. Specular X-ray reflectivity (SXR) is a versatile and widely used metrology to quantify the thickness, density, and roughness of thin smooth films. Here we extend specular X-ray reflectivity (SXR) to measure the thickness of the residual layer with sub-nm resolution. In addition to the residual layer thickness, X-ray reflectivity also reveals detailed information about the pattern height, the line to space ratio, and the relative line width variations of the pattern as a function of the pattern height.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hae-Jeong Lee, Christopher L. Soles, Hyun Wook Ro, Daniel R. Hines, Ronald L. Jones, Eric K. Lin, and Wen-li Wu "High-resolution residual layer thickness metrology using x-ray reflectivity", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600004
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Cited by 1 scholarly publication.
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KEYWORDS
Reflectivity

Silicon

X-rays

Data modeling

Metrology

Nanoimprint lithography

Scattering

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