Paper
8 June 2004 Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects
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Abstract
AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.
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Saurabh K. Lohokare, Christopher A Schuetz, Zhaolin Lu, Dennis W. Prather, Oleg V. Sulima, Jeffery A. Cox, Victor A. Solov'ev, Sergey V. Ivanov, and Jian V. Li "Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); https://doi.org/10.1117/12.527869
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KEYWORDS
Polymers

Photodetectors

Etching

Photoresist materials

Gallium antimonide

Optical lithography

Photodiodes

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