MOCVD-grown InAs/GaAs quantum dots

Diana L. Huffaker; S. Birudavolu

doi:10.1117/12.488041

1 July 2003 MOCVD-grown InAs/GaAs quantum dots

Diana L. Huffaker, S. Birudavolu

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.488041
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

We discuss a growth technique for producing a high quality quantum dot (QD) ensemble that has both high QD density and low defect density. The growth conditions under which the QDs nucleate, are optimized to form high density QDs with few defects, however, it is very difficult to prevent coalescence completely. Pausing the AsH₃ flow for a few seconds after nucleation allows surface adatoms to migrate from poly-crystalline defect sites where the bond strengths are weak to crystalline QD sites. We will discuss statistical analysis based on atomic force microscope (AFM) images, high-resolution transmission electron microscopy (HRTEM), and electroluminescence (EL) to characterize the effects of AsH₃ pauses on the QD density and crystallographic shape. Ground state PL from capped QDs is measured at 1.38 μm with a 40 meV linewidth. We demonstrate lasing from the first excited state under room-temperature pulsed characteristics.

Citation Download Citation

Diana L. Huffaker and S. Birudavolu "MOCVD-grown InAs/GaAs quantum dots", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.488041

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