Ripple formation in excimer laser-irradiated silicon dioxide/silicon system

J. J. Yu; Yongfeng Lu

doi:10.1117/12.317950

15 August 1998 Ripple formation in excimer laser-irradiated silicon dioxide/silicon system

J. J. Yu, Yongfeng Lu

Proceedings Volume 3550, Laser Processing of Materials and Industrial Applications II; (1998) https://doi.org/10.1117/12.317950
Event: Photonics China '98, 1998, Beijing, China

Abstract

Excimer laser-induced surface structures at the interfaces of Silicon dioxide/Silicon have been investigated experimentally. It is found that a stable, fine and homogeneous ripple structure is preferentially generated under a comparatively larger laser beam. The ripple periodicity seems to have no angular dependence and is enhanced with the increased laser pulses only before the irradiation of certain pulse numbers. The initial substrate temperature also represents an important parameter which can be used to control the interface ripple structures. The correlation between the threshold laser pulse for the ripple formation and laser fluence, the threshold laser pulse and the oxide thickness is studied as well. This study will be helpful in understanding the physics of laser- induced ripple formation by some key parameters, and hence be useful in controlling the ripple structures within the range required for the laser texturing for the high density magnetic recording media.

Citation Download Citation

J. J. Yu and Yongfeng Lu "Ripple formation in excimer laser-irradiated silicon dioxide/silicon system", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317950

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