Presentation + Paper
24 March 2017 Nanoparticle photoresist studies for EUV lithography
Kazuki Kasahara, Hong Xu, Vasiliki Kosma, Jeremy Odent, Emmanuel P. Giannelis, Christopher K. Ober
Author Affiliations +
Abstract
EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuki Kasahara, Hong Xu, Vasiliki Kosma, Jeremy Odent, Emmanuel P. Giannelis, and Christopher K. Ober "Nanoparticle photoresist studies for EUV lithography", Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014308 (24 March 2017); https://doi.org/10.1117/12.2258187
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CITATIONS
Cited by 16 scholarly publications and 2 patents.
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KEYWORDS
Nanoparticles

Photoresist materials

Extreme ultraviolet lithography

Metals

Photoresist developing

Zirconium

Lithography

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