A systematic framework for evaluating standard cell middle-of-line (MOL) robustness for multiple patterning

Xiaoqing Xu; Brian Cline; Greg Yeric; Bei Yu; David Z. Pan

doi:10.1117/12.2085918

18 March 2015 A systematic framework for evaluating standard cell middle-of-line (MOL) robustness for multiple patterning

Xiaoqing Xu, Brian Cline, Greg Yeric, Bei Yu, David Z. Pan

Author Affiliations +

Proceedings Volume 9427, Design-Process-Technology Co-optimization for Manufacturability IX; 942707 (2015) https://doi.org/10.1117/12.2085918
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Multiple patterning (triple and quadruple patterning) is being considered for use on the Middle-Of-Line (MOL) layers at the 10nm technology node and beyond.¹ For robust standard cell design, designers need to improve the inter-cell compatibility for all combinations of cells and cell placements. Multiple patterning colorability checks break the locality of traditional rule checking and N-wise checks are strongly needed to verify the multiple patterning colorability for layout interaction across cell boundaries. In this work, a systematic framework is proposed to evaluate the library-level robustness over multiple patterning from two perpectives, including illegal cell combinations and full chip interactions. With efficient N-wise checks, the vertical and horizontal boundary checks are explored to predict illegal cell combinations. For full chip interactions, random benchmarks are generated by cell shifting and tested to evaluate the placement-level efforts needed to reduce the quadruple patterning to triple patterning for the MOL layer.

Citation Download Citation

Xiaoqing Xu, Brian Cline, Greg Yeric, Bei Yu, and David Z. Pan "A systematic framework for evaluating standard cell middle-of-line (MOL) robustness for multiple patterning", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 942707 (18 March 2015); https://doi.org/10.1117/12.2085918

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