Patterning chemistry of HafSOx resist

Jenn M. Amador; Shawn R. Decker; Stefan E. Lucchini; Rose E. Ruther; Douglas A. Keszler

doi:10.1117/12.2046605

27 March 2014 Patterning chemistry of HafSOx resist

Jenn M. Amador, Shawn R. Decker, Stefan E. Lucchini, Rose E. Ruther, Douglas A. Keszler

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 90511A (2014) https://doi.org/10.1117/12.2046605
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

A combination of ICP-OES, titration, and Raman spectroscopy was used to determine the ratio of peroxide to hafnium in the inorganic photoresist HafSOx. By using ICP-OES to determine the hafnium concentration and titration with permanganate to determine peroxide in a solution of dissolved films, the Hf:O₂^2- ratio was found to be approximately 2:1 in the films. From Raman measurements on precursor solutions, it was determined that that Hfbound peroxide saturated at this level. Film insolubility is induced through loss of approximately 75% of bound peroxide following exposure to a 30-keV electron beam.

Citation Download Citation

Jenn M. Amador, Shawn R. Decker, Stefan E. Lucchini, Rose E. Ruther, and Douglas A. Keszler "Patterning chemistry of HafSOx resist", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511A (27 March 2014); https://doi.org/10.1117/12.2046605

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