Synthesis of epitaxial rutile-type VO2 and VO2(B) polymorph films

Franklin J. Wong; Shriram Ramanathan

doi:10.1117/12.2044055

8 March 2014 Synthesis of epitaxial rutile-type VO₂ and VO₂(B) polymorph films

Franklin J. Wong, Shriram Ramanathan

Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870W (2014) https://doi.org/10.1117/12.2044055
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

We exploit epitaxial relationships of rutile-type VO₂ with (0001) Al₂O₃, (111) LaAlO₃, (10‾10) Al₂O₃, and (10‾12) Al₂O₃ to achieve high-quality VO₂ thin-film synthesis. We show that the deposition temperature can be lowered when these substrates are employed compared to one with no preferred crystallographic relationship with VO₂, such as Si. We also report the first thin-film synthesis of the metastable VO₂(B) polymorph on (001) LaAlO₃ with a strongly preferred (001) out-of-plane orientation. These results are of interest for integrating _VO2films with other oxides in optoelectronic and reconfigurable device structures.

Citation Download Citation

Franklin J. Wong and Shriram Ramanathan "Synthesis of epitaxial rutile-type VO₂ and VO₂(B) polymorph films", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870W (8 March 2014); https://doi.org/10.1117/12.2044055

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