Heterogeneously integrated lasers on silicon

Brian R. Koch; Erik J. Norberg; Jonathan E. Roth; Byungchae Kim; Anand Ramaswamy; Robert S. Guzzon; John Hutchinson; Jae-Hyuk Shin; Jeffrey Imamura; Brandon Gomez; Gregory Fish; Alexander Fang

doi:10.1117/12.2042023

27 February 2014 Heterogeneously integrated lasers on silicon

Brian R. Koch, Erik J. Norberg, Jonathan E. Roth, Byungchae Kim, Anand Ramaswamy, Robert S. Guzzon, John Hutchinson, Jae-Hyuk Shin, Jeffrey Imamura, Brandon Gomez, Gregory Fish, Alexander Fang

Author Affiliations +

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90020U (2014) https://doi.org/10.1117/12.2042023
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Aurrion’s heterogeneous integration process enables high performance active components such as lasers, modulators, and photodetectors to be elegantly integrated on a silicon photonics platform with high performance passive components. This platform also offers the unique capability to combine different types of active devices with separately optimized materials on the same wafer, die, and photonic integrated circuit. Similarly, devices and photonic integrated circuits operating in different wavelength bands can be formed within the same wafer and die. Experimental demonstrations show that these active components can achieve performance on par with commercially available discrete III-V components. In this paper we will discuss the advantages of Aurrion’s heterogeneous integration platform and discuss prototype demonstrations.

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Brian R. Koch, Erik J. Norberg, Jonathan E. Roth, Byungchae Kim, Anand Ramaswamy, Robert S. Guzzon, John Hutchinson, Jae-Hyuk Shin, Jeffrey Imamura, Brandon Gomez, Gregory Fish, and Alexander Fang "Heterogeneously integrated lasers on silicon", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020U (27 February 2014); https://doi.org/10.1117/12.2042023

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