Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-ir region

Omer Faruk Farsakoglu; D. Mehmet Zengin; Hikmet Kocabas

doi:10.1117/12.130264

1 May 1993 Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-infrared region

Omer Faruk Farsakoglu, D. Mehmet Zengin, Hikmet Kocabas

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Optical Engineering, Vol. 32, Issue 5, (May 1993). https://doi.org/10.1117/12.130264

Abstract

The values of the quantum yield, its spectral dependence, and the external quantum efficiency of GaAlAs/GaAs transmission-mode photocathodes used in image intensification systems are computed based on the parameters of the internal quantum efficiency, the diffusion length, and the normalized surface recombination velocity. The variations for these parameters obtained are shown on the three orthogonal axes. Possible explanations and further lines of the investigation are also discussed.

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Omer Faruk Farsakoglu, D. Mehmet Zengin, and Hikmet Kocabas "Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-infrared region," Optical Engineering 32(5), (1 May 1993). https://doi.org/10.1117/12.130264

Published: 1 May 1993

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