1 March 2019 Effects of narrowband transport on near-field and far-field thermophotonic conversion
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Abstract
Ideal thermophotovoltaic (TPV) converters approach Carnot efficiency in the limit of monochromatic radiative transfer, motivating the design of narrowband thermal emitters and absorbers. Here, we investigate whether this trend holds for converters with realistic losses by studying the effects of transmission bandwidth on the performance of far-field and near-field TPV and thermophotonic (TPX) converters. To bridge the near-field and far-field regimes, the analysis relies on an approximation that the near-field spectral energy flux is a scaled version of the far-field flux, which is validated for weakly absorbing materials using a rigorous near-field simulation. We show that the optimal bandwidth depends on the type of converter. For far-field TPVs with realistic heat losses, narrowband transport is typically detrimental to the efficiency because the converter becomes more susceptible to parasitic loss. However, narrowband transport boosts efficiencies in TPX converters and near-field TPVs as long as the excitation barrier is comparable with the thermal energy. Given the same excitation energy barrier as TPVs, TPX converters benefit from a larger available photon density of states due to the applied bias. This study suggests that near-field TPX converters with a large applied bias have the largest ratio of useful energy flux to parasitic loss. Leveraging this mechanism for actual improvement is contingent on large near-field enhancements improving photon extraction.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1947-7988/2019/$25.00 © 2019 SPIE
Sean McSherry, Tobias Burger, and Andrej Lenert "Effects of narrowband transport on near-field and far-field thermophotonic conversion," Journal of Photonics for Energy 9(3), 032714 (1 March 2019). https://doi.org/10.1117/1.JPE.9.032714
Received: 12 December 2018; Accepted: 6 February 2019; Published: 1 March 2019
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Cited by 11 scholarly publications.
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KEYWORDS
Near field

Energy efficiency

Indium arsenide

Indium gallium arsenide

Gallium arsenide

Semiconductors

Solids

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