9 July 2012 Nanopatterning of diblock copolymer directed self-assembly lithography with wet development
Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Mark H. Somervell, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma
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Abstract
A method for using wet development in a directed self-assembly lithography (DSAL) application is reported. For the typical diblock copolymer poly(styrene-block-methyl methacrylate) (PS-b-PMMA), the PMMA area is removed by an oxygen plasma. However, the oxygen plasma has poor selectivity for the PS portion of the block polymer and etches it simultaneously. As a result, the thickness of the residual PS pattern is thinner than desired and creates a challenge for subsequent pattern transfer. A wet development technique is discussed which offers higher selectivity between the PMMA and PS blocks in the assembled pattern. Specifically, a method using a low pressure mercury lamp and conventional tetramethylammonium hydroxide (TMAH, 2.38%) developer is proposed. Using this method, DSA pattern formation is completed in a single track having coating, baking, exposure, and development modules.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Mark H. Somervell, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, and Tsukasa Azuma "Nanopatterning of diblock copolymer directed self-assembly lithography with wet development," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(3), 031305 (9 July 2012). https://doi.org/10.1117/1.JMM.11.3.031305
Published: 9 July 2012
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Cited by 25 scholarly publications.
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KEYWORDS
Polymethylmethacrylate

Picosecond phenomena

Ultraviolet radiation

Lithography

Directed self assembly

Mercury

Lamps

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