We have produced films of light emitting porous silicon (LEPSi) thinner than 1 μm, lifted them off the silicon wafer by an electropolishing step, and deposited them onto sapphire windows where they remain attached by van der Waals or electrostatic forces. Although free‐standing LEPSi films had been obtained before, our films are one order of magnitude thinner, luminesce strongly, and have excellent mechanical properties because of the sapphire substrate. The important steps in this procedure are discussed, and the structural, chemical, and optical properties of these films as measured using a variety of probes are reported. These films are semitransparent in the visible and thus make several new optical measurements possible. In particular, the results of photoinduced absorption measurements performed with 100 fs time resolution are presented.
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May 1995
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The 3rd International Conference on Nanometer‐Scale Science and Technology
24−28 Oct 1994
Denver, Colorado (USA)
Research Article|
May 01 1995
Properties of ultrathin films of porous silicon
J. von Behren;
J. von Behren
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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K. B. Üçer;
K. B. Üçer
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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L. Tsybeskov;
L. Tsybeskov
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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Ju. V. Vandyshev;
Ju. V. Vandyshev
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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P. M. Fauchet
P. M. Fauchet
Department of Electrical Engineering, University of Rochester, Rochester, New York 14627
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J. Vac. Sci. Technol. B 13, 1225–1229 (1995)
Article history
Received:
October 07 1994
Accepted:
March 06 1995
Citation
J. von Behren, K. B. Üçer, L. Tsybeskov, Ju. V. Vandyshev, P. M. Fauchet; Properties of ultrathin films of porous silicon. J. Vac. Sci. Technol. B 1 May 1995; 13 (3): 1225–1229. https://doi.org/10.1116/1.588241
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