Simulation of Ultrasubmicrometer-Gate <formula formulatype="inline"><tex>$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$</tex></formula> Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator

Simulation of Ultrasubmicrometer-Gate - Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator | IEEE Journals & Magazine | IEEE Xplore