Anomalous effects of lamp annealing in modulation-doped In<inf>0.53</inf>Ga<inf>0.47</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As and Si-implanted In<inf>0.53</inf>Ga<inf>0.47</inf>As

Anomalous effects of lamp annealing in modulation-doped In0.53Ga0.47As/In0.52Al0.48As and Si-implanted In0.53Ga0.47As | IEEE Journals & Magazine | IEEE Xplore

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