Improvement of Resistive Switching Properties in <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ZrO}_{2}$</tex></formula>-Based <emphasis emphasistype="roman">ReRAM</emphasis> With Implanted Ti Ions

Improvement of Resistive Switching Properties in --Based ReRAM With Implanted Ti Ions | IEEE Journals & Magazine | IEEE Xplore