35 nm-L<inf>g</inf> raised S/D In<inf>0.53</inf>Ga<inf>0.47</inf>As quantum-well MOSFETs with 81 mV/decade subthreshold swing at V<inf>DS</inf>=0.5 V

35 nm-Lg raised S/D In0.53Ga0.47As quantum-well MOSFETs with 81 mV/decade subthreshold swing at VDS=0.5 V | IEEE Conference Publication | IEEE Xplore