Exponential Conduction-Band Tail in P-Doped aSi:H

K. Winer, I. Hirabayashi, and L. Ley
Phys. Rev. Lett. 60, 2697 – Published 20 June 1988
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Abstract

We use total-yield photoelectron spectroscopy in combination with the Kelvin probe to obtain a simple and direct determination of the distribution of occupied states over nearly the entire band gap in P-doped aSi:H. The large dynamic range (107:1) and high energy resolution ΔE0.1 eV) of this electron-emission spectroscopy also allow the distribution of unoccupied states above the Fermi level to be determined by division of the measured spectra by the Fermi occupation function. We exploit this novel capability to prove that the conduction-band tail in P-doped aSi:H is exactly exponential.

  • Received 22 February 1988

DOI:https://doi.org/10.1103/PhysRevLett.60.2697

©1988 American Physical Society

Authors & Affiliations

K. Winer*, I. Hirabayashi, and L. Ley

  • Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany

  • *Present address: Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94550.

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Vol. 60, Iss. 25 — 20 June 1988

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