Abstract
We apply scanning tunneling spectroscopy to determine the band gaps of mono-, bi-, and trilayer grown on a graphene single crystal on Ir(111). Besides the typical scanning tunneling spectroscopy at constant height, we employ two additional spectroscopic methods giving extra sensitivity and qualitative insight into the vector of the tunneling electrons. Employing this comprehensive set of spectroscopic methods in tandem, we deduce a band gap of eV for the monolayer. This is close to the predicted values for freestanding and larger than is measured for on other substrates. Through precise analysis of the “comprehensive” tunneling spectroscopy we also identify critical point energies in the mono- and bilayer band structures. These compare well with their calculated freestanding equivalents, evidencing the graphene/Ir(111) substrate as an excellent environment upon which to study the many celebrated electronic phenomena of monolayer and similar materials. Additionally, this investigation serves to expand the fledgling field of the comprehensive tunneling spectroscopy technique itself.
- Received 25 January 2019
- Revised 8 March 2019
DOI:https://doi.org/10.1103/PhysRevB.99.115434
©2019 American Physical Society