High-pressure Raman spectroscopy of graphene

John E. Proctor, Eugene Gregoryanz, Konstantin S. Novoselov, Mustafa Lotya, Jonathan N. Coleman, and Matthew P. Halsall

Phys. Rev. B 80, 073408 – Published 21 August 2009

Abstract

In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.

Received 18 May 2009

DOI:https://doi.org/10.1103/PhysRevB.80.073408

Authors & Affiliations

John E. Proctor^1,*, Eugene Gregoryanz¹, Konstantin S. Novoselov², Mustafa Lotya³, Jonathan N. Coleman³, and Matthew P. Halsall⁴

¹School of Physics and Centre for Science at Extreme Conditions, University of Edinburgh, Edinburgh EH9 3JZ, United Kingdom
²School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
³School of Physics, Trinity College Dublin, Dublin 2, Ireland
⁴School of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom

^*Corresponding author. jproctor@staffmail.ed.ac.uk

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Issue

Vol. 80, Iss. 7 — 15 August 2009

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