DOI:https://doi.org/10.1103/RevModPhys.87.1139
© 2015 Nobel Foundation, Published by The American Physical Society
Schematic depiction of a double-heterostructure (DH) light emitting diode (LED) in operation while being powered by a 2.8 V battery. Within the active, emitting layer, electrons and holes recombine and emit light equal to the band gap of said layer. High-energy electrons are sourced from the negative terminal of the battery and return to the positive terminal after losing their energy to a photon in the active layer.
Reuse & Permissions(a) Image of a blue GaN LED with attached gold wire contacts (size of diode ) and (b) the same LED packaged as a commercial product. From [25].
Reuse & PermissionsFrom blue LED to white LED. Part of the blue light emitted from a blue LED is converted to lower energy colors, such as yellow, using a phosphor. The combination of blue and yellow light is perceived as white to the human eye. Combining a blue LED with embedded phosphors in the plastic cap creates a white LED. From [37].
Reuse & Permissions(a) Schematic of a two-flow MOCVD for GaN growth and (b) schematic of the effect of the newly introduced subflow on the carrier gases. From [19].
Reuse & PermissionsHall mobility measurements at 77 K (●) and 300 K (■) for a thick GaN film grown on sapphire as a function of the GaN buffer layer thickness. From [17].
Reuse & Permissions(a) Change in electrical resistivity of as grown Mg-doped GaN films as a function of annealing temperature in a nitrogen environment. From [26]. (b) Change in resistivity of LEEBI-treated Mg-doped GaN films as a function of annealing temperature in a nitrogen (●) or ammonia (■) environment. From [20]. Annealing time was 20 min for all samples.
Reuse & PermissionsSchematic energy band diagram structure for a (a) homojunction LED and (b) double-heterostructure LED.
Reuse & PermissionsPhotoluminescence spectra of grown at using MOCVD on a sapphire substrate. From [44].
Reuse & Permissions(a) RT PL spectra of InGaN films grown on GaN films under identical growth conditions, except for the InGaN growth temperatures of [trace (a)] and [trace (b)]. (b) Change in peak wavelength of PL spectra as a function of indium mole fraction () in films. Indium fraction was determined by x-ray diffraction measurements. From [22].
Reuse & Permissions(a) Structure of InGaN/AlGaN double-heterostructure blue LED with (b) resulting output power as a function of forward current. From [25].
Reuse & Permissions(a) Green single quantum well (SQW) LED structure. (b) Output power of a blue, green, and yellow SQW LED at RT as a function of forward current. From [28], [29].
Reuse & Permissions(a) Structure of a violet InGaN MQW laser diode with (b) corresponding characteristics indicating the onset of lasing ( wide, long). From [32].
Reuse & PermissionsDependence of LED efficiency on dislocation density for various semiconductor materials. From [13], [6], and [18].
Reuse & PermissionsAtom probe tomography analysis provided as a 2D plot of the lateral compositional variations within a 3 nm InGaN quantum well at nominal 14% indium composition showing local indium fluctuations. From [5].
Reuse & PermissionsComparison of external quantum efficiency (EQE) of a commercial LED and laser with increasing current density. From [38].
Reuse & Permissions
