• Rapid Communication

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites

W. Pan, P. Lu, J. F. Ihlefeld, S. R. Lee, E. S. Choi, Y. Jiang, and Q. X. Jia
Phys. Rev. Materials 2, 021401(R) – Published 22 February 2018
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Abstract

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La2/3Sr1/3MnO3:ZnO nanocomposites, in which La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic (B), and optical properties. In this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. A possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

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  • Received 3 November 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.2.021401

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

W. Pan1, P. Lu1, J. F. Ihlefeld1,2,3, S. R. Lee1, E. S. Choi4, Y. Jiang4, and Q. X. Jia5,6

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 2Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
  • 3Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
  • 4National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
  • 5Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, New York 14260, USA
  • 6Department of Physics, Konkuk University, Seoul, 05029, Korea

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Issue

Vol. 2, Iss. 2 — February 2018

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