Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

Kirill I. Bolotin, Ferdinand Kuemmeth, and D. C. Ralph
Phys. Rev. Lett. 97, 127202 – Published 20 September 2006

Abstract

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

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  • Received 9 February 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.127202

©2006 American Physical Society

Authors & Affiliations

Kirill I. Bolotin, Ferdinand Kuemmeth, and D. C. Ralph

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA

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Issue

Vol. 97, Iss. 12 — 22 September 2006

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