Figure 1

Energy dependence of $D$ for indium on Ge(111) during ${\mathrm{Ar}}^{+}$ bombardment. The dashed line represents the thermal value. Threshold energy for the ion-induced increase lies at $16\pm 1\mathrm{eV}$.Reuse & Permissions

Figure 2

Arrhenius plots for indium diffusion on Si(111) under ${\mathrm{Ar}}^{+}$ bombardment at several energies. The lines represent linear fits using a constant $E_{\mathrm{diff}}$ of 1.65 eV.Reuse & Permissions

Figure 3

Temperature dependence of $E_{\mathrm{thres}}$ for indium on Si and Ge. $E_{\mathrm{thres}}$ decreases linearly with $T$ according to $E_{\mathrm{thres}}=E_{\mathrm{tot}}-\sigma kT$. The lines represent fits using $\sigma =1320$ for both surfaces.Reuse & Permissions

Figure 4

Sketch illustrating why the rate of temperature variation of $E_{\mathrm{thres}}$ remains the same for different substrate materials. Contours of constant repulsive potential are shown schematically for stiff (a) and less stiff (b) lattices, together with typical ion trajectories for ions above and below $E_{\mathrm{thres}}$. Near $E_{\mathrm{thres}}$, defects are produced when ions hit asperities in the potential, and the ions reflect in nonspecular directions. (a) For stiff lattices with a steep repulsive potential, thermal vibrations cause small substrate atom excursions that vary slowly with temperature, but only small excursions are needed for ions to induce defects. (b) For less stiff lattices, the thermal excursions are larger and vary more rapidly with temperature but are compensated by the need for larger excursions to produce defects because low-energy ions penetrate less closely.Reuse & Permissions