Layer Ordering and Faulting in (GaAs)n/(AlAs)n Ultrashort-Period Superlattices

J. H. Li, S. C. Moss, Y. Zhang, A. Mascarenhas, L. N. Pfeiffer, K. W. West, W. K. Ge, and J. Bai
Phys. Rev. Lett. 91, 106103 – Published 5 September 2003

Abstract

We report studies of (GaAs)n/(AlAs)n ultrashort-period superlattices using synchrotron x-ray scattering. In particular, we demonstrate that interfaces of these superlattices contain features on two different length scales: namely, random atomic mixture and ordered mesoscopic domains. Both features are asymmetric on the two interfaces (AlAs-on-GaAs and GaAs-on-AlAs) for n>2. Periodic compositional stacking faults, arising from the intrinsic nature of molecular-beam epitaxy, are found in the superlattices. In addition, the effect of growth interruption on the interfacial structure is discussed. The relevant scattering theory is developed to give excellent fits to the data.

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  • Received 24 February 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.106103

©2003 American Physical Society

Authors & Affiliations

J. H. Li1,2, S. C. Moss1,2, Y. Zhang3, A. Mascarenhas3, L. N. Pfeiffer4, K. W. West4, W. K. Ge5, and J. Bai6

  • 1Physics Department, University of Houston, Houston, Texas 77204-5005, USA
  • 2Texas Center for Superconductivity and Advanced Materials, University of Houston, Houston, Texas 77204, USA
  • 3National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  • 4Bell Laboratories, Lucent Technology, Murray Hill, New Jersey 07974, USA
  • 5Department of Physics, Hong Kong University of Science & Technology, Hong Kong, China
  • 6Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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Issue

Vol. 91, Iss. 10 — 5 September 2003

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