Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation

Hawoong Hong, C.-M. Wei, M. Y. Chou, Z. Wu, L. Basile, H. Chen, M. Holt, and T.-C. Chiang
Phys. Rev. Lett. 90, 076104 – Published 20 February 2003

Abstract

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)(7×7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

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  • Received 2 August 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.076104

©2003 American Physical Society

Authors & Affiliations

Hawoong Hong1, C.-M. Wei2,3, M. Y. Chou3, Z. Wu1,4, L. Basile1,5, H. Chen6, M. Holt1,5, and T.-C. Chiang1,5

  • 1Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Avenue, Urbana, Illinois 61801-2902
  • 2Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 11529, Republic of China
  • 3School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430
  • 4Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green Street, Urbana, Illinois 61801-2980
  • 5Department of Physics, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801-3080
  • 6Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, SAR, People’s Republic of China

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Issue

Vol. 90, Iss. 7 — 21 February 2003

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