Sn/Ge(111) Surface Charge-Density-Wave Phase Transition

T. E. Kidd, T. Miller, M. Y. Chou, and T.-C. Chiang
Phys. Rev. Lett. 85, 3684 – Published 23 October 2000
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Abstract

Angle-resolved photoemission has been utilized to study the surface electronic structure of 13 monolayer of Sn on Ge(111) in both the room-temperature (3×3)R30° phase and the low-temperature ( 3×3) charge-density-wave phase. The results reveal a gap opening around the ( 3×3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting. A highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the ( 3×3) symmetry.

  • Received 4 May 2000

DOI:https://doi.org/10.1103/PhysRevLett.85.3684

©2000 American Physical Society

Authors & Affiliations

T. E. Kidd1,2, T. Miller1,2, M. Y. Chou3, and T.-C. Chiang1,2,*

  • 1Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080
  • 2and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902
  • 3School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430

  • *Email address: t-chiang@uiuc.edu

Comments & Replies

Comment on “ Sn/Ge(111) Surface Charge-Density-Wave Phase Transition”

L. Petersen, Ismail, and E. W. Plummer
Phys. Rev. Lett. 88, 189701 (2002)

Kidd et al. Reply:

T. E. Kidd, T. Miller, M. Y. Chou, and T.-C. Chiang
Phys. Rev. Lett. 88, 189702 (2002)

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Vol. 85, Iss. 17 — 23 October 2000

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