Structures of Germanium Clusters: Where the Growth Patterns of Silicon and Germanium Clusters Diverge

Alexandre A. Shvartsburg, Bei Liu, Zhong-Yi Lu, Cai-Zhuang Wang, Martin F. Jarrold, and Kai-Ming Ho
Phys. Rev. Lett. 83, 2167 – Published 13 September 1999
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Abstract

We have performed a systematic ground state geometry search for Gen neutrals and cations in the n16 size range using density functional theory–local density approximation and gradient-corrected methods. Like their silicon analogs, medium-sized Ge clusters are stacks of tricapped trigonal prism subunits. However, the structures of Gen and Sin for n=13 and n15 differ in details. The onset of the structural divergence between the growth patterns of Si and Ge clusters is confirmed by the measurements of gas phase ion mobilities, fragmentation pathways, and dissociation energies.

  • Received 16 February 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.2167

©1999 American Physical Society

Authors & Affiliations

Alexandre A. Shvartsburg1, Bei Liu2, Zhong-Yi Lu2, Cai-Zhuang Wang2, Martin F. Jarrold1, and Kai-Ming Ho2

  • 1Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
  • 2Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011

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Vol. 83, Iss. 11 — 13 September 1999

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