Correlation Effects in the Compton Profile of Silicon

Balázs Králik, Paul Delaney, and Steven G. Louie
Phys. Rev. Lett. 80, 4253 – Published 11 May 1998
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Abstract

Ab initio nonlocal pseudopotential variational quantum Monte Carlo techniques are used to compute the correlation effects on the valence momentum density and Compton profile of silicon. Our results for this case are in excellent agreement with the Lam-Platzman correction computed within the local density approximation. Within the approximations used, we rule out valence electron correlations as the dominant source of discrepancies between calculated and measured Compton profiles of silicon.

  • Received 27 June 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.4253

©1998 American Physical Society

Authors & Affiliations

Balázs Králik, Paul Delaney, and Steven G. Louie

  • Department of Physics, University of California at Berkeley, Berkeley, California 94720,
  • and Materials Science Division, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, California 94720

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Vol. 80, Iss. 19 — 11 May 1998

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