Energetic and Spatial Bonding Properties from Angular Distributions of Ultraviolet Photoelectrons: Application to the GaAs(110) Surface

C. Solterbeck, W. Schattke, J.-W. Zahlmann-Nowitzki, K.-U. Gawlik, L. Kipp, M. Skibowski, C. S. Fadley, and M. A. Van Hove
Phys. Rev. Lett. 79, 4681 – Published 8 December 1997
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Abstract

Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spatial properties of the contributing states. One-step calculations are in excellent agreement with new azimuthal experimental data for GaAs(110). Strong variations caused by the dispersion of the surface bands permit an accurate mapping of the electronic structure. The delocalization of the valence states is discussed analogous to photoelectron diffraction. The spatial origin of the electrons is determined, and found to be strongly energy dependent, with uv excitation probing the bonding region.

  • Received 18 February 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.4681

©1997 American Physical Society

Authors & Affiliations

C. Solterbeck and W. Schattke

  • Institut für Theoretische Physik, Christian-Albrechts-Universität Kiel, Leibnizstraße 15, D-24098 Kiel, Germany

J.-W. Zahlmann-Nowitzki, K.-U. Gawlik, L. Kipp, and M. Skibowski

  • Institut für Experimentalphysik, Christian-Albrechts-Universität Kiel, Leibnizstraße 19, D-24098 Kiel, Germany

C. S. Fadley1,2 and M. A. Van Hove2

  • 1Department of Physics, University of California-Davis, Davis, California 95616
  • 2Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

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Issue

Vol. 79, Iss. 23 — 8 December 1997

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