Electric Field Scaling at a <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="italic">B</mi><mspace></mspace><mo>=</mo><mspace></mspace><mn>0</mn><mn></mn></math></span> Metal-Insulator Transition in Two Dimensions

S. V. Kravchenko; D. Simonian; M. P. Sarachik; Whitney Mason; J. E. Furneaux

doi:10.1103/PhysRevLett.77.4938

Electric Field Scaling at a $B = 0$ Metal-Insulator Transition in Two Dimensions

S. V. Kravchenko, D. Simonian, M. P. Sarachik, Whitney Mason, and J. E. Furneaux

Phys. Rev. Lett. 77, 4938 – Published 9 December 1996

Abstract

The nonlinear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at $B = 0$ . Comparison with the temperature scaling yields separate determinations of the correlation length exponent, $ν \approx 1.5$ , and the dynamical exponent, $z \approx 0.8$ , close to the theoretical value $z = 1$ .