Photon-mediated sequential resonant tunneling in intense terahertz electric fields

P. S. S. Guimarães, Brian J. Keay, Jann P. Kaminski, S. J. Allen, Jr., P. F. Hopkins, A. C. Gossard, L. T. Florez, and J. P. Harbison
Phys. Rev. Lett. 70, 3792 – Published 14 June 1993
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Abstract

We have measured the current-voltage (I-V) characteristic of semiconductor superlattices in the presence of intense terahertz electric fields produced by free-electron lasers. The nonlinear I-V curves exhibit new structure that we attribute to photon-mediated sequential resonant tunneling. This tunneling process consists of well to well sequential tunneling into photon sidebands induced by the terahertz electric fields.

  • Received 28 December 1992

DOI:https://doi.org/10.1103/PhysRevLett.70.3792

©1993 American Physical Society

Authors & Affiliations

P. S. S. Guimarães, Brian J. Keay, Jann P. Kaminski, and S. J. Allen, Jr.

  • Center for Free Electron Laser Studies, University of California–Santa Barbara, Santa Barbara, California 93106

P. F. Hopkins and A. C. Gossard

  • Materials Department, University of California–Santa Barbara, Santa Barbara, California 93106

L. T. Florez and J. P. Harbison

  • Bellcore, Redbank, New Jersey 07701

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Vol. 70, Iss. 24 — 14 June 1993

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