Excitation mechanisms and optical properties of rare-earth ions in semiconductors

Stefan Schmitt-Rink, Chandra M. Varma, and Anthony F. J. Levi
Phys. Rev. Lett. 66, 2782 – Published 27 May 1991
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Abstract

The optical activity of rare-earth ions in semiconductors is discussed taking into account the large 4f-level correlation energy. In addition to crystal-field effects, three many-body excitation mechanisms of 4f-4f transitions are identified; coherent or incoherent energy transfer via electron-hole pairs and nonequilibrium electron excitation. The first two give rise to novel nonlinear optical effects, while the last promises a simple means of achieving optical gain.

  • Received 20 February 1991

DOI:https://doi.org/10.1103/PhysRevLett.66.2782

©1991 American Physical Society

Authors & Affiliations

Stefan Schmitt-Rink, Chandra M. Varma, and Anthony F. J. Levi

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 66, Iss. 21 — 27 May 1991

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