Light-induced drift of quantum-confined electrons in semiconductor heterostructures

Mark I. Stockman, Lakshmi N. Pandey, and Thomas F. George
Phys. Rev. Lett. 65, 3433 – Published 31 December 1990
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Abstract

The effect of light-induced drift of quantum-confined electrons in semiconductor heterostructures is predicted. The effect manifests itself as the electric current in the heterostructure plane in response to optical excitation with the frequency close, but not exactly equal, to a transition frequency between levels in the heterostructure. The current reverses its direction with a change in the detuning sign, and vanishes if the radiation polarization is normal to the heterostructure plane.

  • Received 2 August 1990

DOI:https://doi.org/10.1103/PhysRevLett.65.3433

©1990 American Physical Society

Authors & Affiliations

Mark I. Stockman, Lakshmi N. Pandey, and Thomas F. George

  • Departments of Chemistry and Physics and Astronomy, Center for Electronic and Electro-optic Materials, 239 Fronczak Hall, State University of New York at Buffalo, Buffalo, New York 14260

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Issue

Vol. 65, Iss. 27 — 31 December 1990

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