Coherency of interfacial roughness in GaAs/AlAs superlattices

Ivan K. Schuller, M. Grimsditch, F. Chambers, G. Devane, H. Vanderstraeten, D. Neerinck, J.-P. Locquet, and Y. Bruynseraede
Phys. Rev. Lett. 65, 1235 – Published 3 September 1990
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Abstract

The presence of a nonrandom fractional number of atomic planes in each layer of a superlattice produces unusual diffraction patterns in which the peaks cannot be indexed in the usual fashion as due to a single series. The x-ray line broadenings are distinctly different from earlier measurements and calculations in which the interfacial roughness is due to random variations of the scattering function. Therefore, interfacial roughness encountered at a single interface may just be a consequence of controlled, but not random, roughness and that under proper growth conditions superlattices with atomically sharp interfaces may be produced. These results are in good agreement with experimental measurements.

  • Received 8 June 1989

DOI:https://doi.org/10.1103/PhysRevLett.65.1235

©1990 American Physical Society

Authors & Affiliations

Ivan K. Schuller

  • Department of Physics, B-019, University of California at San Diego, La Jolla, California 92093

M. Grimsditch

  • Material Science Division, Building 223, Argonne National Laboratory, Argonne, Illinois 60439

F. Chambers and G. Devane

  • Amoco Research Center, Amoco Technology Company, Naperville, Illinois 60566

H. Vanderstraeten, D. Neerinck, J.-P. Locquet, and Y. Bruynseraede

  • Laboratorium voor Vaste Stof-Fysika en Magnetisme, Katholieke Universiteit Leuven, Leuven 3030, Belgium

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Vol. 65, Iss. 10 — 3 September 1990

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